Synthesis and optical properties of layered AIIIBVI semiconductor nanoparticles by laser ablation

Authors

  • V.M. Salmanov Baku State University, AZ1148 Baku, Azerbaijan
  • M.A. Jafarov Baku State University, AZ1148 Baku, Azerbaijan
  • R.M. Mamedov Baku State University, AZ1148 Baku, Azerbaijan
  • T.A. Mamedova Baku State University, AZ1148 Baku, Azerbaijan

Keywords:

InSe,GaSe,GaS nanoparticles, laser ablation, absorption, stimulated radiation

Abstract

GaSe, InSe nanoparticles obtained by the interaction of laser radiation with the element In,Ga and a solution of SeO2 were experimentally studied. A pulsed Nd:YAG laser with a wavelength of λ=1064 nm, with a duration of 10 ns and an energy of 135 mJ per pulse was used as a radiation source. In the colloidal solution, the formation of nanoparticles with a diameter of 7 to 65 nm was observed. With the help of diffraction analysis of X-rays, a scanning electron microscope, an atomic force microscope, and spectroscopy of the dispersed energy of X-rays, the internal structure and structure of X-rays were studied samples. The energy gap width and the character of optical transitions are determined using the optical absorption and photoluminescence spectra

Published

2024-11-11

How to Cite

V.M. Salmanov, M.A. Jafarov, R.M. Mamedov, & T.A. Mamedova. (2024). Synthesis and optical properties of layered AIIIBVI semiconductor nanoparticles by laser ablation. Scientific Results, (8). Retrieved from https://ojs.publisher.agency/index.php/SR/article/view/4597

Issue

Section

Physical and Mathematical Sciences