Synthesis and optical properties of layered AIIIBVI semiconductor nanoparticles by laser ablation

Abstract

GaSe, InSe nanoparticles obtained by the interaction of laser radiation with the element In,Ga and a solution of SeO₂ were experimentally studied. A pulsed Nd:YAG laser with a wavelength of λ=1064 nm, with a duration of 10 ns and an energy of 135 mJ per pulse was used as a radiation source. In the colloidal solution, the formation of nanoparticles with a diameter of 7 to 65 nm was observed. With the help of diffraction analysis of X-rays, a scanning electron microscope, an atomic force microscope, and spectroscopy of the dispersed energy of X-rays, the internal structure and structure of X-rays were studied samples. The energy gap width and the character of optical transitions are determined using the optical absorption and photoluminescence spectra