MEMORY CREATION IN TlInTe2-TlGdTe2 SYSTEM ALLOYS AND MECHANISMS OF OCCURRENCE OF NEGATRON EFFECTS

Authors

  • Ulviyye Mustafa Mustafayeva Assistant, Sumgayit State University, 43-rd district, AZ5008, Sumgait, Azerbaijan
  • Joshqun Jumshud. Bayramov docent, Sumgayit State University, 43-rd district, AZ5008, Sumgait, Azerbaijan
  • Khayala Vaqif Aliguliyeva docent, Sumgayit State University, 43-rd district, AZ5008, Sumgait, Azerbaijan
  • Jahangir I. Huseynov docent, Azerbaijan State Pedagogical University, Baku, Azerbaijan

Keywords:

negatory effect, solid solution, threshold voltage, electronic coating, conduction band, chalcogenide glass conductor, current exposure, phonon spectrum

Abstract

Summary: The volt-ampere characteristics (VAC) of solid solutions of alloys of the   system were studied in the direct current mode by the standard method. It has been established that there is a vast area in which there is a deviation from Ohm's law before the start of the transformation process. In this area, the current increases exponentially depending on the voltage. In this area, the thermal effect can be neglected. An electronic conversion mechanism plays a key role here. It was found that   solid solutions have a conversion property and the threshold voltage decreases with an increase in the amount of gadalinium in the composition.

Published

2024-07-15

How to Cite

Ulviyye Mustafa Mustafayeva, Joshqun Jumshud. Bayramov, Khayala Vaqif Aliguliyeva, & Jahangir I. Huseynov. (2024). MEMORY CREATION IN TlInTe2-TlGdTe2 SYSTEM ALLOYS AND MECHANISMS OF OCCURRENCE OF NEGATRON EFFECTS. Theoretical Hypotheses and Empirical Results, (7). Retrieved from https://ojs.publisher.agency/index.php/THIR/article/view/3968

Issue

No. 7 (2024): Theoretical Hypotheses and Empirical Results

Section

Physical and mathematical sciences

License

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